Stresa, Italy, 25-27 April 2007 DEVELOPMENT OF A NANOSTRUCTUAL MICROWAVE PROBE BASED ON GaAs

In order to develop a new structure microwave probe, the fabrication of AFM probe on the GaAs wafer was studied. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. A tip having 7 μm high, 2.0 aspect ratio was formed. The dimensions of the cantilever are 250×30×15 μm. The open structure of the waveguide at the tip of the probe was obtained by using FIB fabrication. AFM image and profile analysis for a standard sample obtained by the fabricated GaAs microwave probe and commercial Si AFM probe indicate that the fabricated probe has the similar capability for the measurement of topography of materials.